Showing posts with label Mismatch. Show all posts
Showing posts with label Mismatch. Show all posts

Insights of Random Mismatch Part-4

Insights of Random Mismatch


I have explained the basic concept of "Random Mismatch" , Current Mirror Offset and Differential Pair Offset in the previous three blogs. In this blog, I will be explaining how degeneration can help us to improve the accuracy of Current Mirrors. I shall explain the concept through a problem statement this time.

The following I-V equation for a MOSFET in saturation is used:

$I_D=\frac{\beta }{2}\left ( V_{GS}-V_t \right )^{2}$ where $\beta =\mu C_{ox}\frac{W}{L}$

and $g_m=\frac{\partial I_D}{\partial V_{GS}}=\beta \left ( V_{GS}-V_t \right )=\frac{2I_D}{\left ( V_{GS}-V_t \right )}=\frac{2I_D}{V_{ov}}$


Problem Statement:


1. Design a 1:1 NMOS current mirror (Fig.1) for 10% accuracy (6 sigma) of $I_{d}$ 
given, 

$I_{ref}=5 \mu A$ 
$\mu _nC_{ox}=30\mu A/V^2$
$A_{Vt}=3mV\mu m$
$A_{\beta }=2\%\mu m$
$A_{R }=2\%\mu m$
$Minimum V_{ov}=100mV$
 
Calculate $V_{out1,min}$

2. Improve upto 2% accuracy (6 sigma) of $I_{d}$ 

(i) by increasing the L only (Fig. 2) and keep the same W as of Fig.1. Calculate $V_{out2,min}$

(ii) by inserting degeneration resistor only (Fig. 3) and keep the same W and L as of Fig.1. Calculate $V_{out3,min}$


Solution:1


$I_D=\frac{\mu _nC_{ox}\frac{W}{L} }{2}V_{ov}^{2}$

$\frac{W}{L}=\frac{2I_D}{\mu _nC_{ox}V_{ov}^2}\Rightarrow \frac{W}{L}=33.3$ .....(1)

From the previous blog we know, the current mismatch in a current mirror will be:


$\frac{\sigma _{\Delta I_D }}{I_D}=\frac{g_m}{I_D}\sigma_{\Delta V_t}$

$\Rightarrow \frac{\sigma_ {\Delta I_D}}{I_D}=\frac{\sqrt{\frac{2\mu _nC_{ox}A_{Vt}^2}{I_{ref}}}}{L}$

$\Rightarrow L=\frac{\sqrt{\frac{2\mu _nC_{ox}A_{Vt}^2}{I_{ref}}}}{\frac{\sigma_{ \Delta I_D}}{I_D}}$ ......(2)

Given 6-sigma accuracy is 10%$\Rightarrow 6\times {\frac{\sigma_ { \Delta I_D}}{I_D}}=10\% =0.1$

From (2), $L=0.62\mu m\approx 0.6\mu m$
Using (1) and (2), $W=33.3\times 0.62\mu m\approx 20.8\mu m$

$M1:20.8\mu m/0.6\mu m$
$M2:20.8\mu m/0.6\mu m$

$V_{out,min1}=V_{ov1}=100mV$

Solution:2.(i)


From the previous blog we know, the current mismatch in a current mirror will be:


$\frac{\sigma _{\Delta I_D }}{I_D}=\frac{g_m}{I_D}\sigma_{\Delta V_t}$

$\Rightarrow \frac{\sigma_ {\Delta I_D}}{I_D}=\frac{\sqrt{\frac{2\mu _nC_{ox}A_{Vt}^2}{I_{ref}}}}{mL}$

$\Rightarrow mL=\frac{\sqrt{\frac{2\mu _nC_{ox}A_{Vt}^2}{I_{ref}}}}{\frac{\sigma_{ \Delta I_D}}{I_D}}$ ......(3)

Given 6-sigma accuracy is 10%$\Rightarrow 6\times {\frac{\sigma_ { \Delta I_D}}{I_D}}=2\% =0.02$

From (3), $mL=3.12\mu m\approx 3.1\mu m$
$W\approx 20.8\mu m$

$M3:20.8\mu m/3.1\mu m$
$M4:20.8\mu m/3.1\mu m$

$V_{out,min2}=V_{ov2}=\sqrt {\frac{2I_D}{\mu_nC_{ox}\frac{W}{mL}}}=224mV$

$V_{out,min2}=V_{ov2}=\sqrt {\frac{2I_D}{\mu_nC_{ox}\frac{W}{mL}}}=\sqrt{m}V_{ov1}$

Solution:2.(ii)


$I_D=\frac{\beta }{2}\left ( V_{G}-I_DR-V_t \right )^{2}$

$\Rightarrow \Delta I_D=\frac{\Delta \beta }{2}\left ( V_{G}-I_DR-V_t \right )^{2}-\Delta V_t\frac{\beta }{2}2\left ( V_{G}-I_DR-V_t \right )$

$\hspace{2.5cm} -R\Delta I_{D}\frac{\beta}{2}2\left (V_{G}-I_DR-V_t \right)-I_D\Delta R\frac{\beta}{2}2\left (V_{G}-I_DR-V_t \right)$



$\Rightarrow \frac{\Delta I_D}{I_D}=\frac{\frac{\Delta \beta }{2}\left ( V_{G}-I_DR-V_t \right )^{2}}{\frac{\beta }{2}\left ( V_{G}-I_DR-V_t \right )^{2}}-\frac{\Delta V_t\frac{\beta }{2}2\left ( V_{G}-I_DR-V_t \right )}{\frac{\beta }{2}\left ( V_{G}-I_DR-V_t \right )^{2}}-\frac{R\Delta I_{D}\frac{\beta}{2}2\left (V_{G}-I_DR-V_t \right)}{I_D}$

$\hspace{2.5cm} -\frac{I_D\Delta R\frac{\beta}{2}2\left (V_{G}-I_DR-V_t \right)}{\frac{\beta }{2}\left ( V_{G}-I_DR-V_t \right )^{2}}$


$\Rightarrow \frac{\Delta I_D}{I_D}\left [1+\beta\left(  V_{GS}-V_t\right )R \right ]=\frac{\Delta \beta }{\beta }-\frac{2\Delta V_t}{\left ( V_{GS}-V_t \right )}-\frac{2I_D\Delta R}{\left ( V_{GS}-V_t \right )}$


$\Rightarrow \frac{\Delta I_D}{I_D} \left (1+g_mR \right )=\frac{\Delta \beta }{\beta }-\frac{g_m}{I_D}\Delta V_t-g_mR\frac{\Delta R}{R}$



$\Rightarrow \frac{\sigma _{\Delta I_D }}{I_D}=\frac{1}{\left (1+g_mR \right )}\sqrt{\left ( \frac{\sigma _{\Delta \beta }}{\beta } \right )^2+\left ( \frac{g_m}{I_D}\sigma_{ \Delta V_t } \right )^2+\left ( g_mR\frac{\sigma _{\Delta R }}{R } \right )^2}$ ......(4)

Neglecting $\beta$ and $R$ mismatch, (I have already proved that we can neglect the $\beta$ mismatch in blog2. Did neglecting $R$ mismatch matter? We shall come back to this point in the end)

$\frac{\sigma _{\Delta I_D }}{I_D}=\frac{1}{\left(1+g_mR \right)}\frac{g_m}{I_D}\sigma_{\Delta V_t}$ ......(5)

Given 6-sigma accuracy is 10%$\Rightarrow 6\times {\frac{\sigma_ { \Delta I_D}}{I_D}}=2\% =0.02$

$\Rightarrow \frac{\sigma_ {\Delta I_D}}{I_D}=\frac{1}{\left(1+g_mR\right)}\frac{\sqrt{\frac{2\mu _nC_{ox}A_{Vt}^2}{I_{ref}}}}{L}$

$\Rightarrow 1+g_mR=\frac{\sqrt{\frac{2\mu _nC_{ox}A_{Vt}^2}{I_{ref}}}}{\frac{\sigma_{ \Delta I_D}}{I_D}} \frac{1}{L}$

Given $L=0.62\mu m$ and $W=20.8\mu m$,
$g_m=\frac{2I_D}{V_{ov}}=100 \mu S$

$1+g_mR=5$
$\Rightarrow g_mR=4$
$\Rightarrow R=\frac{4}{g_m}=40 k\Omega$

To generalize,

$1+g_mR=\frac{mL}{L}$
$\Rightarrow g_mR=m-1$
$\Rightarrow R=\frac{m-1}{g_m}$


From (4), $L=0.62\mu m\approx 0.6\mu m$
$W\approx 20.8\mu m$ 
$R=40k \Omega$


$M5:20.8\mu m/0.6\mu m$
$M6:20.8\mu m/0.6\mu m$
$R=40k\Omega$

$V_{out,min3}=I_DR+V_{ov3}=300mV$

To generalize,
$V_{out,min3}=I_DR+V_{ov3}=I_D \frac{\left( m-1 \right)}{g_m}+V_{ov1}=\left( m-1 \right)\frac{V_{ov1}}{2}+V_{ov1}=\frac{\left( m+1 \right)}{2}V_{ov1}$

Summary:


Let's summarize what we have learnt:

1. So, at first we have a simple current mirror whose accuracy was 10%

2. Our objective was to improve its accuracy up to 2%, means we want its accuracy 5X better. Now this can be done in two ways:

(i) Fig. (2) We know that the accuracy of the current mirror is inversely proportional with L (W has nothing to do with the accuracy). So if want 5X better accuracy, we simply have to increase the L by 5X and that's exactly what the math also tells us. But if we keep the W same, that means we are decreasing the (W/L) ratio by 5 times, which indeed will increase the headroom requirement by $\sqrt{5}X$

(ii) Fig. (3) Also we saw, by degenerating the current mirror, we can improve the accuracy by a factor of $\left(1+g_mR\right)$. So, instead of increasing the L by 5X, we choose the value of R, such that $1+g_mR=5$, keeping the W and L same. Now, in this case, as (W/L) is not changed, the overdrive will not change but one extra IR drop will be added which will increase the headroom requirement. Also, due to the mismatch between the resistors, some additional mismatch will be added which may degrade the accuracy, but by choosing resistor with sufficient W and L, we can minimize the effect of R mismatch.

3. Now as circuit designer, we have to understand the trade offs. So basically, if your IP has very low VDD (less headroom), probably you will prefer to increase L to improve accuracy. On the other hand, if your IP has tight area constraints, you may end up with degeneration to improve the accuracy of your current mirror. 

The below table will summarize the above statements.

 

 

$\frac{W}{L}, R=0$

Fig. (1)

$\frac{W}{mL}, R=0$

Fig. (2)

$\frac{W}{L}, R=\frac{m-1}{g_m}$

Fig. (3)

Accuracy

$X\%$

$\frac{X}{m}\%$

$\frac{X}{m}\%$

Vout,min

$V_{ov}$

$\sqrt{m}{V_{ov}}$

$\frac{\left(m+1\right)}{2}V_{ov}$

Area

$2*WL$

$2*mWL$

$2*WL+2*\left(WL\right)_R$


NOTE: $m>1$


Bonus Assignment:


Aren't you curious, how to quantify the effect of R mismatch? I won't solve this, but I shall give you hints how to calculate it.

Let's take the Fig. (3). For the ease of calculation, let's take the area of resistor is same as of the mosfet i.e. 20.8um x 3.1um. 

$\frac{\sigma _{\Delta R }}{R }=\frac{A_R}{\left(WL\right)_R}$

$\frac{\sigma _{\Delta I_D }}{I_D}=\frac{1}{\left (1+g_mR \right )}\sqrt{\left ( \frac{\sigma _{\Delta \beta }}{\beta } \right )^2+\left ( \frac{g_m}{I_D}\sigma_{ \Delta V_t } \right )^2+\left ( g_mR\frac{\sigma _{\Delta R }}{R } \right )^2}$

Use these two equations, and calculate the extra error introduced by the R mismatch (Ignore the $\beta$ mismatch). Do let me know in the comment section. Do you think this error is significant enough?

Insights of Random Mismatch Part-3

 

        Insights of Random Mismatch


"Random Mismatch" is a tricky but very important topic with respect to Analog Design. As a learner, (still I am a learner, jokes apart!) I never found the crisp one shot material related to "Random Mismatch" in the internet. Of course you will find some piecewise information (with some boring mathematics without any application) about this topic but you can't find any material where the real application of mismatch has been demonstrated with respect to analog design viewpoint. In reality, you have to meet a given accuracy spec (say 1% or 5%), and that's where random mismatch calculations come into picture to decide the W and L of the MOSFETs in your circuit. I will try to show some demonstrations in this blog. 

I have explained the basic concept of "Random Mismatch" and Current Mirror Offset in the previous two blogs. In this blog, I will be explaining how to quantify the offset in a diff pair and how to meet a certain offset spec in a diff pair by sizing the transistors properly with help of mismatch calculations.


Offset Derivation of Diff Pair:

The following I-V equation for a MOSFET in saturation is used:

 
$I_D=\frac{\beta }{2}\left ( V_{GS}-V_t \right )^{2}$ where $\beta =\mu C_{ox}\frac{W}{L}$


$\Rightarrow \Delta I_D=\frac{\Delta \beta }{2}\left ( V_{GS}-V_t \right )^{2}-\Delta V_t\frac{\beta }{2}2\left ( V_{GS}-V_t \right )+\Delta V_{GS}\frac{\beta}{2}2\left (V_{GS}-V_t \right)$

Constant current so, $\Delta I_{D}=0$ 

$0=\frac{\frac{\Delta \beta }{2}\left ( V_{GS}-V_t \right )^{2}}{\frac{\beta }{2}2\left ( V_{GS}-V_t \right )}-\Delta V_t+\Delta V_{GS}$


$\Delta V_{GS}=-\frac{\Delta \beta }{\beta }\frac{\left ( V_{GS}-V_t \right )}{2}+\Delta V_t$


$\Delta V_{GS}=-\frac{\Delta \beta }{\beta }\frac{I_D}{g_m}+\Delta V_t$


$\Rightarrow \sigma _{\Delta V_{GS} }=\sqrt{\left ( \frac{\sigma _{\Delta \beta }}{\beta }\frac{I_D}{g_m} \right )^2+\left ( \sigma_{ \Delta V_t } \right )^2}$ ......(1)

Neglecting $\beta $ mismatch, (In the previous blog, I have proved that we can easily neglect $\beta$ mismatch with respect to $V_t$ mismatch while doing the analysis. Still, I will prove once again in Problem1)

$\sigma _{\Delta V_{GS} }=\sigma_{\Delta V_t}$ ......(2)


Let's jump into a practical problem to understand the significance of the above analysis. In industry, diff pair and current mirror are probably the most used circuits in any analog block. So, it's very important to know how to design a diff pair and current mirror very accurately to meet the specs. Now this example can be demonstrated in 2 ways.

  1. Analysis: You will be given the sizes of the current mirror transistors and you have to find the accuracy of the current mirror.
  2. Synthesis: You have to design the current mirror to meet a given accuracy spec. 


So, I shall take 2 problems. Problem 1 will be an Analysis of a diff pair and Problem 2 will be a Synthesis/Design problem where I will merge the concepts of a diff pair and current mirror both!


Problem Statement 1: 

Calculate Input Referred Offset $V_{io}$ (6-sigma) of the given NMOS diff pair 
given, 
  • $I_{tail}=5 \mu A$ 
  • $\mu _nC_{ox}=15\mu A/V^2$
  • $A_{Vt}=15mV\mu m$
  • $A_{\beta }=2\%\mu m$
  • $\left (\frac{W}{L}\right )_{1,2}=\frac{40 \mu m}{1 \mu m}$



Solution:


$I_D=\frac{I_{tail}}{2}=2.5\mu A$

$g_{m1,2}=\sqrt{2I_D\mu_nC_{ox}\left (\frac{W}{L} \right )_{1,2}}=54.77\mu S$

From the previous blog we know, the threshold mismatch $\Delta V_t$ and $\beta$ mismatch between two MOSFETs of same sizes will be:

$\sigma _{\Delta V_t}=\frac{A_{Vt}}{\sqrt{WL}}=3.87mV$

$\frac{\sigma _{\Delta \beta }}{\beta}=\frac{A_{\beta}}{\sqrt{WL}}=3.16mV$

$\Rightarrow \frac{\sigma _{\Delta \beta }}{\beta}\frac{I_D}{g_m}=\frac{A_{\beta}}{\sqrt{WL}}\frac{I_D}{g_m}=0.14mV$

From (1), $\sigma _{\Delta V_{GS} }=\sqrt{\left ( \frac{\sigma _{\Delta \beta }}{\beta }\frac{I_D}{g_m} \right )^2+\left ( \sigma_{ \Delta V_t } \right )^2}=\sqrt{\left (0.14mV\right)^2+\left (3.87mV\right)^2}=3.87mV$

$\therefore V_{io}=6\sigma_{\Delta V_{GS}}=23.23mV$

It is clear from the above example that we can safely ignore the $\beta$ mismatch with respect to $V_t$ mismatch. In the next example, we shall proceed with only $V_t$ mismatch.


Problem Statement 2: 

Design a diff pair with active current mirror load with input-referred offset (6-sigma) of 3mV 
given, 
  • $I_{tail}=2 \mu A$ 
  • $\mu _nC_{ox}=150\mu A/V^2$
  • $\mu _pC_{ox}=40\mu A/V^2$
  • $A_{Vtn}=8.5mV\mu m$
  • $A_{Vtp}=4mV\mu m$
  • $g_{mp}=40\mu S$
  • $\left (V_{ov}\right )_n=250mV$




Solution:

$I_D=\frac{I_{tail}}{2}=1\mu A$

$g_{mn}=\frac{2I_D}{V_{ovn}}=8\mu S$

Given, $V_{io}=6\sigma_{\Delta V_{GS}}=3mV \Rightarrow \sigma_{\Delta V_{GS}}=0.5mV \Rightarrow \sigma_{\Delta V_{GS}}^2=0.25\mu V^2$

Assuming half of this variance from diff pair and rest half is from current mirror.

$\sigma_{\Delta V_{GS}}^2 \left(diff pair\right)=0.125\mu V^2 \Rightarrow \sigma_{\Delta V_{GS}}\left(diff pair\right)=0.353 V$

$\sigma_{\Delta V_{GS}}^2\left(Current Mirror\right)=0.125\mu V^2 \Rightarrow \sigma_{\Delta V_{GS}}\left(Current Mirror\right)=0.353 V$

Diff Pair:

$\sigma_{\Delta V_{GS}}\left(Diff pair\right)=\sigma_{\Delta V_{tp}}=\frac{A_{Vtp}}{\sqrt{WL_p}}=0.353 V$

$\Rightarrow \left(WL\right)_p=128 {\left(\mu m\right)}^2$......(3)

$\left({\frac{W}{L}}\right)_p=\frac{{g_{mp}}^2}{2I_D \mu_PC_{ox}}$

$\Rightarrow \left({\frac{W}{L}}\right)_p=20$......(4)

Solving (3) and (4), $\left({\frac{W}{L}}\right)_p=\frac{50.5\mu m}{2.5\mu m}$

Current Mirror:

$\sigma_{\Delta V_{GS}}\left(Current Mirror\right)=\frac{\sigma_{\Delta I_D}}{g_{mp}}=\frac{\sigma_{\Delta I_D}}{I_D}\ast \frac{I_D}{g_{mp}}=\frac{g_{mn}}{I_D} \sigma_{\Delta V_{tn}} \ast \frac{I_D}{g_{mp}}$

$\sigma_{\Delta V_{GS}}\left(Current Mirror\right)=\frac{g_{mn}}{g_{mp}} \sigma_{\Delta V_{tn}}=\frac{g_{mn}}{g_{mp}} \frac{A_{Vtn}}{\sqrt{WL_n}}=0.353V $

$\Rightarrow \left(WL\right)_n=23.1 {\left(\mu m\right)}^2$......(5)

$\left({\frac{W}{L}}\right)_n=\frac{{g_{mn}}^2}{2I_D \mu_nC_{ox}}$

$\Rightarrow \left({\frac{W}{L}}\right)_n=0.213$......(6)

Solving (5) and (6), $\left({\frac{W}{L}}\right)_n=\frac{2.2\mu m}{10.4\mu m}$

$M1:50.5\mu m/2.5\mu m$
$M2:50.5\mu m/2.5\mu m$
$M3:2.2\mu m/10.4\mu m$
$M4:2.2\mu m/10.4\mu m$


Conclusion:

So, this is the way to design diff pair and current mirror with the help of "Random Mismatch". The take away is, we can easily neglect $\beta$ mismatch with respect to $V_t$ mismatch while doing the analysis.


So, as promised I have shown some frequently used practical examples of random mismatch. Possibly you have never seen such detailed analysis regarding "Random Mismatch". Believe me, I have invested a lot of time to derive these equations because neither these are available in books nor in the internet. Also, after deriving, I have cross checked the results by simulations to ensure I am not passing any wrong information to the readers. So, if you appreciate this blog, in the comment section please let us know, does this content/blog add some value to you? If you have any suggestion/feedback for us to make this blog better, you are highly appreciated. 

Insights of Random Mismatch Part-2

        Insights of Random Mismatch


"Random Mismatch" is a tricky but very important topic with respect to Analog Design. As a learner, (still I am a learner, jokes apart!) I never found the crisp one shot material related to "Random Mismatch" in the internet. Of course you will find some piecewise information (with some boring mathematics without any application) about this topic but you can't find any material where the real application of mismatch has been demonstrated with respect to analog design viewpoint. In reality, you have to meet a given accuracy spec (say 1% or 5%), and that's where random mismatch calculations come into picture to decide the W and L of the MOSFETs in your circuit. I will try to show some demonstrations in this blog. 

I have explained the basic concept of "Random Mismatch" in the previous blog. In this blog, I will be explaining how to quantify the mismatch in a current mirror and how to meet a certain accuracy spec in a current mirror by sizing the transistors properly with help of mismatch calculations.


Offset Derivation of Current Mirror:

The following I-V equation for a MOSFET in saturation is used:

 
$I_D=\frac{\beta }{2}\left ( V_{GS}-V_t \right )^{2}$ where $\beta =\mu C_{ox}\frac{W}{L}$

and $g_m=\frac{\partial I_D}{\partial V_{GS}}=\beta \left ( V_{GS}-V_t \right )=\frac{2I_D}{\left ( V_{GS}-V_t \right )}$

$\Rightarrow \Delta I_D=\frac{\Delta \beta }{2}\left ( V_{GS}-V_t \right )^{2}-\Delta V_t\frac{\beta }{2}2\left ( V_{GS}-V_t \right )+\Delta V_{GS}\frac{\beta}{2}2\left (V_{GS}-V_t \right)$

$\Delta V_{GS}=0$ for a Current Mirror

$\Rightarrow \frac{\Delta I_D}{I_D}=\frac{\frac{\Delta \beta }{2}\left ( V_{GS}-V_t \right )^{2}}{\frac{\beta }{2}\left ( V_{GS}-V_t \right )^{2}}-\frac{\Delta V_t\frac{\beta }{2}2\left ( V_{GS}-V_t \right )}{\frac{\beta }{2}\left ( V_{GS}-V_t \right )^{2}}$


$\Rightarrow \frac{\Delta I_D}{I_D}=\frac{\Delta \beta }{\beta }-\frac{2\Delta V_t}{\left ( V_{GS}-V_t \right )}$


$\Rightarrow \frac{\Delta I_D}{I_D}=\frac{\Delta \beta }{\beta }-\frac{g_m}{I_D}\Delta V_t$


$\Rightarrow \frac{\sigma _{\Delta I_D }}{I_D}=\sqrt{\left ( \frac{\sigma _{\Delta \beta }}{\beta } \right )^2+\left ( \frac{g_m}{I_D}\sigma_{ \Delta V_t } \right )^2}$ ......(1)

Neglecting $\beta $ mismatch, (Did neglecting $\beta $ mismatch matter? We shall come back to this point in the end)

$\frac{\sigma _{\Delta I_D }}{I_D}=\frac{g_m}{I_D}\sigma_{\Delta V_t}$ ......(2)


Let's jump into a practical problem to understand the significance of the above analysis. In industry, current mirror is probably the most used circuit in any analog block. So, it's very important to know how to design a current mirror very accurately. Now this example can be demonstrated in 2 ways.

  1. Analysis: You will be given the sizes of the current mirror transistors and you have to find the accuracy of the current mirror.
  2. Synthesis: You have to design the current mirror to meet a given accuracy spec. 


No. 2 is more common and practical scenario. So, I will go ahead with a synthesis problem instead of an analysis problem.


Problem Statement:

Design a 1:50 PMOS current mirror for 1% accuracy (6 sigma) of $I_{d}$ 
given, 
$I_{ref}=1 \mu A$ 
$\mu _pC_{ox}=30\mu A/V^2$
$A_{Vt}=3mV\mu m$
$A_{\beta }=2\%\mu m$
$Minimum V_{ov}=250mV$





Solution:


$I_D=\frac{\mu _pC_{ox}\frac{NW}{L} }{2}V_{ov}^{2}$

$\frac{NW}{L}=\frac{2I_D}{\mu _pC_{ox}V_{ov}^2}\Rightarrow \frac{W}{L}=1.07$ .....(3)

From the previous blog we know, the threshold mismatch $\Delta V_t$ between two MOSFETs of sizes $\left (W_1/L_1  \right )$ and $\left (W_2/L_2  \right )$ will be:

$\sigma _{\Delta V_t}=\frac{A_{Vt}}{\sqrt{2}}\sqrt{\frac{1}{W_1L_1}+\frac{1}{W_2L_2}}$

$\Rightarrow \sigma _{\Delta V_t}=\frac{A_{Vt}}{\sqrt{2}}\sqrt{\frac{1}{WL}+\frac{1}{NWL}}=\frac{A_{Vt}}{\sqrt{2WL}}\sqrt{1+\frac{1}{N}}$

From (2), $\frac{\sigma _{\Delta I_D }}{I_D}=\frac{g_m}{I_D}\sigma_{\Delta V_t}$

$\Rightarrow \frac{\sigma _{\Delta I_D }}{I_D}=\frac{\sqrt{2I_D\mu _pC_{ox}\frac{NW}{L}}}{I_D}\times \frac{A_{Vt}}{\sqrt{2WL}}\sqrt{1+\frac{1}{N}}$

$\Rightarrow \frac{\sigma_ { \Delta I_D }}{I_D}=\frac{\sqrt{2NI_{ref}\mu _pC_{ox}\frac{NW}{L}}}{NI_{ref}}\times \frac{A_{Vt}}{\sqrt{2WL}}\sqrt{1+\frac{1}{N}}$


$\Rightarrow \frac{\sigma_ {\Delta I_D}}{I_D}=\frac{\sqrt{\frac{\mu _pC_{ox}A_{Vt}^2}{I_{ref}}\left ( 1+\frac{1}{N} \right )}}{L}$

$\Rightarrow L=\frac{\sqrt{\frac{\mu _pC_{ox}A_{Vt}^2}{I_{ref}}\left ( 1+\frac{1}{N} \right )}}{\frac{\sigma_{ \Delta I_D}}{I_D}}$ ......(4)

Given 6-sigma accuracy is 1%$\Rightarrow 6\times {\frac{\sigma_ { \Delta I_D}}{I_D}}=1\% =0.01$

From (4), $L=9.96\mu m\approx 10\mu m$
Using (3) and (4), $W=1.07\times 10\mu m\approx 10.7\mu m$

$M1:10.7\mu m/10\mu m$
$M2:50*(10.7\mu m)/10\mu m$


Now, let's do the same analysis but this time we shall also take $\beta $ mismatch into account.

From the previous blog we know, the $\beta $ mismatch between two MOSFETs of sizes $\left (W_1/L_1  \right )$ and $\left (W_2/L_2  \right )$ will be:

$\frac{\sigma _{\Delta \beta }}{\beta }=\frac{A_{\beta }}{\sqrt{2}}\sqrt{\frac{1}{W_1L_1}+\frac{1}{W_2L2}}$

$\Rightarrow \frac{\sigma _{\Delta \beta }}{\beta }=\frac{A_{\beta}}{\sqrt{2}}\sqrt{\frac{1}{WL}+\frac{1}{NWL}}=\frac{A_{\beta}}{\sqrt{2WL}}\sqrt{1+\frac{1}{N}}=\frac{A_{\beta}}{\sqrt{2\frac{W}{L}L^2}}\sqrt{1+\frac{1}{N}}$ .....(5)

Putting (2) & (5) into (1),
$\frac{\sigma_ { \Delta I_D }}{I_D}=\sqrt{\left \{ \frac{A_{\beta}}{\sqrt{2\frac{W}{L}L^2}}\sqrt{1+\frac{1}{N}} \right \}^2+\left \{ \frac{A_{Vt}\sqrt{\left ( 1+\frac{1}{N} \right )\frac{\mu _pC_{ox}}{I_{ref}}}}{L} \right \}^2}$

$\Rightarrow L=\frac{\sqrt{\left ( \frac{\mu _pC_{ox}A_{Vt}^2}{I_{ref}}+\frac{A_{\beta}^2}{2\frac{W}{L}} \right )\left ( 1+\frac{1}{N} \right )}}{\frac{\sigma_ { \Delta I_D }}{I_D}}$ .....(6)

Given 6-sigma accuracy is 1%$\Rightarrow 6\times {\frac{\sigma \left ( \Delta I_D \right )}{I_D}}=1\% =0.01$

Using (6), $L=12.96\mu m\approx 13\mu m$
Using (3) and (6), $W=1.07\times 13\mu m\approx 13.8\mu m$

$M1:13.8\mu m/13\mu m$
$M2:50*(13.8\mu m)/13\mu m$


Conclusion:

So, there is a small change in size after taking $\beta $ mismatch into consideration but this complicates the equations. That's why, we generally neglect the $\beta $ mismatch with respect to $V_{th}$ mismatch.


So, as promised I have shown a frequently used practical example of random mismatch. Possibly you have never seen such detailed analysis regarding "Random Mismatch". Believe me, I have invested a lot of time to derive these equations because neither these are available in books nor in the internet. Also, after deriving, I have cross checked the results by simulations to ensure I am not passing any wrong information to the readers. So, if you appreciate this blog, in the comment section please let us know, does this content/blog add some value to you? If you have any suggestion/feedback for us to make this blog better, you are highly appreciated. In the next blog, I will come with the same analysis for a diff pair.

Declaimer: As these are my own derived equations, if anywhere I have done any mistake, please let me know. I am always ready to accept my mistake and learn through that mistake.