Insights of Random Mismatch
"Random Mismatch" is a tricky but very important topic with respect to
Analog Design. As a learner, (still I am a learner, jokes apart!) I never
found the crisp one shot material related to "Random Mismatch" in the
internet. Of course you will find some piecewise information (with some
boring mathematics without any application) about this topic but you can't
find any material where the real application of mismatch has been
demonstrated with respect to analog design viewpoint. In reality, you have
to meet a given accuracy spec (say 1% or 5%), and that's where random
mismatch calculations come into picture to decide the W and L of the
MOSFETs in your circuit. I will try to show some demonstrations in this
blog.
I have explained the basic concept of "Random Mismatch" in the
previous blog. In this blog, I will be explaining how to quantify the mismatch in a
current mirror and how to meet a certain accuracy spec in a current mirror
by sizing the transistors properly with help of mismatch
calculations.
Offset Derivation of Current Mirror:
The following I-V equation for a MOSFET in saturation is used:
$I_D=\frac{\beta }{2}\left ( V_{GS}-V_t \right )^{2}$ where $\beta =\mu C_{ox}\frac{W}{L}$
and $g_m=\frac{\partial I_D}{\partial V_{GS}}=\beta \left ( V_{GS}-V_t \right )=\frac{2I_D}{\left ( V_{GS}-V_t \right )}$
$\Rightarrow \Delta I_D=\frac{\Delta \beta }{2}\left ( V_{GS}-V_t \right )^{2}-\Delta V_t\frac{\beta }{2}2\left ( V_{GS}-V_t \right )+\Delta V_{GS}\frac{\beta}{2}2\left (V_{GS}-V_t \right)$
$\Delta V_{GS}=0$ for a Current Mirror
$\Rightarrow \frac{\Delta I_D}{I_D}=\frac{\frac{\Delta \beta }{2}\left (
V_{GS}-V_t \right )^{2}}{\frac{\beta }{2}\left ( V_{GS}-V_t \right
)^{2}}-\frac{\Delta V_t\frac{\beta }{2}2\left ( V_{GS}-V_t \right
)}{\frac{\beta }{2}\left ( V_{GS}-V_t \right )^{2}}$
$\Rightarrow \frac{\Delta I_D}{I_D}=\frac{\Delta \beta }{\beta
}-\frac{2\Delta V_t}{\left ( V_{GS}-V_t \right )}$
$\Rightarrow \frac{\Delta I_D}{I_D}=\frac{\Delta \beta }{\beta
}-\frac{g_m}{I_D}\Delta V_t$
$\Rightarrow \frac{\sigma _{\Delta I_D }}{I_D}=\sqrt{\left (
\frac{\sigma _{\Delta \beta }}{\beta } \right )^2+\left (
\frac{g_m}{I_D}\sigma_{ \Delta V_t } \right )^2}$ ......(1)
Neglecting $\beta $ mismatch, (Did neglecting $\beta $ mismatch matter? We shall come back to
this point in the end)
$\frac{\sigma _{\Delta I_D }}{I_D}=\frac{g_m}{I_D}\sigma_{\Delta
V_t}$ ......(2)
Let's jump into a practical problem to understand the significance of
the above analysis. In industry, current mirror is probably the most
used circuit in any analog block. So, it's very important to know how to
design a current mirror very accurately. Now this example can be
demonstrated in 2 ways.
-
Analysis:
You will be given the sizes of the current mirror transistors and
you have to find the accuracy of the current mirror.
-
Synthesis:
You have to design the current mirror to meet a given accuracy
spec.
No. 2 is more common and practical scenario. So, I will go ahead with a
synthesis problem instead of an analysis problem.
Problem Statement:
Design a 1:50 PMOS current mirror for 1% accuracy (6 sigma) of
$I_{d}$
given,
$I_{ref}=1 \mu A$
$\mu _pC_{ox}=30\mu A/V^2$
$A_{Vt}=3mV\mu m$
$A_{\beta }=2\%\mu m$
$Minimum V_{ov}=250mV$
$I_D=\frac{\mu _pC_{ox}\frac{NW}{L} }{2}V_{ov}^{2}$
$\frac{NW}{L}=\frac{2I_D}{\mu _pC_{ox}V_{ov}^2}\Rightarrow
\frac{W}{L}=1.07$ .....(3)
From the previous
blog
we know, the threshold mismatch $\Delta V_t$ between two MOSFETs of sizes $\left (W_1/L_1 \right
)$ and $\left (W_2/L_2 \right )$ will be:
$\sigma _{\Delta
V_t}=\frac{A_{Vt}}{\sqrt{2}}\sqrt{\frac{1}{W_1L_1}+\frac{1}{W_2L_2}}$
$\Rightarrow \sigma _{\Delta
V_t}=\frac{A_{Vt}}{\sqrt{2}}\sqrt{\frac{1}{WL}+\frac{1}{NWL}}=\frac{A_{Vt}}{\sqrt{2WL}}\sqrt{1+\frac{1}{N}}$
From (2), $\frac{\sigma _{\Delta I_D }}{I_D}=\frac{g_m}{I_D}\sigma_{\Delta
V_t}$
$\Rightarrow \frac{\sigma _{\Delta I_D }}{I_D}=\frac{\sqrt{2I_D\mu
_pC_{ox}\frac{NW}{L}}}{I_D}\times
\frac{A_{Vt}}{\sqrt{2WL}}\sqrt{1+\frac{1}{N}}$
$\Rightarrow \frac{\sigma_ { \Delta I_D
}}{I_D}=\frac{\sqrt{2NI_{ref}\mu
_pC_{ox}\frac{NW}{L}}}{NI_{ref}}\times
\frac{A_{Vt}}{\sqrt{2WL}}\sqrt{1+\frac{1}{N}}$
$\Rightarrow \frac{\sigma_ {\Delta I_D}}{I_D}=\frac{\sqrt{\frac{\mu
_pC_{ox}A_{Vt}^2}{I_{ref}}\left ( 1+\frac{1}{N} \right )}}{L}$
$\Rightarrow L=\frac{\sqrt{\frac{\mu
_pC_{ox}A_{Vt}^2}{I_{ref}}\left ( 1+\frac{1}{N} \right
)}}{\frac{\sigma_{ \Delta I_D}}{I_D}}$ ......(4)
Given 6-sigma accuracy is 1%$\Rightarrow 6\times {\frac{\sigma_ { \Delta I_D}}{I_D}}=1\%
=0.01$
From (4), $L=9.96\mu m\approx 10\mu m$
Using (3) and (4),
$W=1.07\times 10\mu m\approx 10.7\mu m$
$M1:10.7\mu m/10\mu m$
$M2:50*(10.7\mu m)/10\mu m$
Now, let's do the same analysis but this time we shall also take $\beta
$ mismatch into account.
From the previous blog we know, the $\beta $ mismatch between two MOSFETs of sizes $\left (W_1/L_1 \right )$ and
$\left (W_2/L_2 \right )$ will be:
$\frac{\sigma _{\Delta \beta }}{\beta }=\frac{A_{\beta
}}{\sqrt{2}}\sqrt{\frac{1}{W_1L_1}+\frac{1}{W_2L2}}$
$\Rightarrow \frac{\sigma _{\Delta \beta }}{\beta
}=\frac{A_{\beta}}{\sqrt{2}}\sqrt{\frac{1}{WL}+\frac{1}{NWL}}=\frac{A_{\beta}}{\sqrt{2WL}}\sqrt{1+\frac{1}{N}}=\frac{A_{\beta}}{\sqrt{2\frac{W}{L}L^2}}\sqrt{1+\frac{1}{N}}$ .....(5)
Putting (2) & (5) into (1),
$\frac{\sigma_ { \Delta I_D }}{I_D}=\sqrt{\left \{
\frac{A_{\beta}}{\sqrt{2\frac{W}{L}L^2}}\sqrt{1+\frac{1}{N}} \right
\}^2+\left \{ \frac{A_{Vt}\sqrt{\left ( 1+\frac{1}{N} \right
)\frac{\mu _pC_{ox}}{I_{ref}}}}{L} \right \}^2}$
$\Rightarrow L=\frac{\sqrt{\left ( \frac{\mu
_pC_{ox}A_{Vt}^2}{I_{ref}}+\frac{A_{\beta}^2}{2\frac{W}{L}} \right
)\left ( 1+\frac{1}{N} \right )}}{\frac{\sigma_ { \Delta I_D
}}{I_D}}$ .....(6)
Given 6-sigma accuracy is 1%$\Rightarrow 6\times {\frac{\sigma \left ( \Delta I_D \right
)}{I_D}}=1\% =0.01$
Using (6), $L=12.96\mu m\approx 13\mu m$
Using (3) and (6),
$W=1.07\times 13\mu m\approx 13.8\mu m$
$M1:13.8\mu m/13\mu m$
$M2:50*(13.8\mu m)/13\mu m$
Conclusion:
So, there is a small change in size after taking $\beta $ mismatch into
consideration but this complicates the equations. That's why, we
generally neglect the $\beta $ mismatch with respect to $V_{th}$
mismatch.
So, as promised I have shown a frequently used practical example of
random mismatch. Possibly you have never seen such detailed analysis
regarding "Random Mismatch". Believe me, I have invested a lot of time
to derive these equations because neither these are available in books
nor in the internet. Also, after deriving, I have cross checked the
results by simulations to ensure I am not passing any wrong information
to the readers. So, if you appreciate this blog, in the comment
section please let us know, does this content/blog add some value to
you? If you have any suggestion/feedback for us to make this blog
better, you are highly appreciated. In the next blog, I will come with
the same analysis for a diff pair.
Declaimer: As these are my own derived
equations, if anywhere I have done any mistake, please let me know. I am
always ready to accept my mistake and learn through that mistake.